5S Components
630 Fifth Avenue, East McKeesport, PA 15035
P: 412-967-5858 | F: 412-967-5868 | info@5Scomponents.com
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Application Notes:

  • 1200V IGBTs operating at 200°C? An investigation on the potentials and the design constraints
  • 1200V Merged PIN Schottky Diode with Soft Recovery and Positive Temperature Coefficient
  • 2.5kV-6.5kV Industry Standard IGBT Modules Setting a New Benchmark in SOA Capability
  • 4.5 kV-Fast-Diodes with Expanded SOA Using a Multi-Energy Proton Lifetime Control Technique
  • A 6.5kV IGBT Module with very high Safe Operating Area
  • A Family of Reverse Conducting Gate Commutated Thyristors for Medium Voltage Drive Applications
  • A High Voltage IGBT and Diode Chip Set designed for the 2.8kV DC Link Level with Short Circuit Capability extending to the Maximum Blocking Voltage
  • A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies
  • A New Degree of Freedom in Diode Optimization: Arbitrary Axial Lifetime Profiles by Means of Ion Irradiation
  • A New Generation of Asymmetric and Reverse Conducting GTOs and their Snubber Diodes
  • A New Range of Reverse Conducting Gate-Commutated Thyristors For High Voltage, Medium Power Applications
  • A Study of Switching-Self-Clamping-Mode “SSCM” as an Over-voltage Protection Feature in High Voltage IGBTs
  • Application-Specific Fast-Recovery Diodes: Design and Performance
  • Applying IGCT Gate Units
  • Cosmic ray induced failures in High Power Semiconductor devices
  • Crossing Point Current of Electron and Proton Irradiated Power P-i-N Diodes
  • Crossing Point Current of Power P-i-N Diodes: Impact of Lifetime Treatment
  • Design of RC Snubbers for Phase Control Applications
  • Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV
  • Failure rates of HiPak modules due to cosmic rays
  • Failure rates of IGCT's due to cosmic rays
  • Free Wheeling Diodes With Improved Reverse Recovery By Combined Electron and Proton Irradiation
  • Gate-Drive recommendations for Phase Control Thyristors
  • High Voltage SPT+ HiPak Modules Rated at 4500V
  • HiPak Modules with SPT+ Technology Rated up to 3.6kA
  • Mounting Instructions for Hi-Pak Modules
  • New Plasma Shaping Technology for Optimal High Voltage Diode Performance
  • Next Generation Planar IGBTs with SPT+ Technology
  • Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability
  • Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve
  • Proton Irradiation For Improved GTO Thyristors
  • Recommendations regarding Mechanical Clamping of Press Pack High Power Semiconductors
  • Simulation tool for IGBT modules
  • SOA in High Power Semiconductors
  • Soft Punch Through (SPT) – Setting new Standards in 1200V IGBT
  • SPT+, the Next Generation of Low-Loss HV-IGBTs
  • Switching-Self-Clamping-Mode “SSCM”, A breakthrough in SOA performance for high voltage IGBTs and Diodes
  • The Bidirectional Control Thyristor (BCT)
  • The Design, Application and Production-Testing of High-Power Fast Recovery Diodes
  • The Field Charge Extraction (FCE) Diode A Novel Technology for Soft Recovery High Voltage Diodes
  • Why is Plasma Engineering in Fast Recovery Diodes by Ion Irradiation superior to Emitter Efficiency Reduction?


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    Home | Company Info | Contact Us | Technical Papers | Application Notes | Brochures | What’s New? | Site Map

    5S Components
    630 Fifth Avenue, East McKeesport, PA 15035
    P: 412-967-5858 | F: 412-967-5868 | info@5Scomponents.com